feb.1999 mitsubishi transistor modules QM200HC-M high power switching use non-insulated type outline drawing & circuit diagram dimensions in mm application robotics, welders, forklifts, golf cart QM200HC-M ? i c collector current ........................ 200a ? v cex collector-emitter voltage ........... 350v ? h fe dc current gain............................. 100 ? non-insulated type 12 12 22 8 14 67.5 80 92.2 15 35.5 5.4 m4 m6 26 (28) 4.5 b bx e e c ebbx e label
feb.1999 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute b(e) terminal screw m4 bx terminal screw m4 main terminal screw m6 mounting screw m5 typical value ratings 350 350 400 10 200 200 830 6 2000 C40~+150 C40~+125 0.98~1.47 10~15 0.98~1.47 10~15 1.96~2.94 20~30 1.47~1.96 15~20 200 absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight unit v v v v a a w a a c c v nm kgcm nm kgcm nm kgcm nm kgcm g mitsubishi transistor modules QM200HC-M high power switching use non-insulated type electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 100 parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =350v, v eb =2v v cb =400v, emitter open v eb =10v i c =200a, i b =2a Ci c =200a (diode forward voltage) i c =200a, v ce =2v v cc =200v, i c =200a, i b1 =Ci b2 =4a transistor part diode part conductive grease applied typ. max. 1.0 1.0 400 2.0 2.5 1.5 2.0 10 3.0 0.15 0.25 0.07
feb.1999 ? 10 ? 10 ? 10 ? 10 ? 10 1 10 0 10 1 10 2 10 1 10 7 5 4 3 2 7 5 4 3 2 1.5 1.7 1.9 2.1 2.3 2.5 v ce =2.0v t j =25? 0 10 1 10 0 01 23 4 5 i b =4.0a i b =2.0a i b =1.0a i b =0.4a i b =0.2a 40 80 120 160 200 240 280 320 360 400 t j =25? 7 5 4 3 2 2 10 7 5 4 3 2 57 2 3457 t j =25? t j =125? 3 10 2345 v ce =5.0v v ce =2.0v 7 5 4 3 2 7 5 4 3 2 45 7 2 3 45 7 t j =25? t j =125? i b =2.0a v ce(sat) 1 10 0 10 1 10 2 10 2 234 v be(sat) 7 5 4 3 2 7 5 4 3 2 23457 23457 t j =25? t j =125? 1 10 0 10 1 10 2 10 3 10 i b1 =? b2 =4.0a v cc =200v t s t on t f 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 0 t j =25? t j =125? 444 i c =100a i c =50a i c =150a i c =200a performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM200HC-M high power switching use non-insulated type
feb.1999 3 10 2 10 1 10 0 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 400 0 0 400 t j =125? 350 300 250 200 150 100 50 50 100 150 200 250 300 350 i b2 =?a 0 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 3457 2 3457 1 10 2 v cc =200v 23 t f t j =25? t j =125? t s i b1 =4a i c =200a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 t c =25? 2 10 3 10 1 10 0 10 3 10 2 10 1 10 0 10 100? 444 dc 200? 50? 1ms 10ms 7 5 3 2 7 5 3 2 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 0 7 5 3 2 1 10 0 10 0 10 ? 10 ? 10 ? 10 0.18 0.16 0.08 0.10 0.06 0.04 0.02 0.12 0.14 0.20 444 non?epetitive collector dissipation second breakdown area 4 switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM200HC-M high power switching use non-insulated type z th (jCc) ( c/ w)
feb.1999 7 5 4 3 2 7 5 4 3 2 0 400 800 1200 1600 2000 0 10 1 10 2 10 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 1 10 0 10 2 10 3 10 0 10 1 10 2 10 3 10 i b1 =? b2 =4a v cc =200v t j =25? t j =125? 0 10 1 10 2 10 ? 10 444 i rr q rr t rr 7 5 3 2 7 5 3 2 7 5 3 2 0.40 0 7 5 3 2 1 10 0 10 0 10 ? 10 ? 10 ? 10 4 0.04 0.36 0.32 0.28 0.24 0.20 0.16 0.12 0.08 444 i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM200HC-M high power switching use non-insulated type z th (jCc) ( c/ w) t rr ( m s)
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